MRF136 Datasheet, PDF (1/2 Pages) Motorola, Inc – N-CHANNEL MOS BROADBAND RF POWER FETs

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
L/na.
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The RF TMOS Line
RF Power Field-Effect Transistors
N-Channel Enhancement-Mode TMOS
designed for wideband large-signal amplifier and oscillator applications in the 2 to
400 MHz range, in either single ended or push-pull configuration.
• Guaranteed 28 Volt, 150 MHz Performance
MRF13B
MRF136Y
Output Power = 15 Watts
Output Power = 30 Watts
Narrowband Gain = 16 dB (Typ) Broadband Gain - 14 dB (Typ)
Efficiency = 60% (Typical)
Efficiency = 54% (Typical)
• Small-Signal and Large-Signal
Characterization
• 100% Tested For Load
Mismatch At All Phase
Angles With 30:1 VSWR
MRF136
• Space Saving Package For
Push-Pull Circuit
Applications— MRF136Y
» Excellent Thermal Stability,
Ideally Suited For Class A
Operation
• Facilitates Manual Gain
Control, ALC and
Modulation Techniques
OS
MRF136
MRF136Y
15 W, 30 W 2-400 MHz
N-CHANNEL
TMOS BROADBAND
RF POWER FETs
MRF136
MAXIMUM RATINGS
Biting
Vuluc
Symbol
Unit
MRF136
MRF136V
^Drain-Source Voltage
Drain-Gate Voltage (RQS = 1 Mill
Gate-Source Voltage
Brain-Current — Continuous
Total Device Dissipation w TC = 25°C
Derate above 25°C
VDSS
VDGR
VGS
ID
PD
65
65
65
65
±40
2.5
5
55
100
0.314
0.571
Vdc
Vdc
Vdc
Adc
Want
W/°C
_j'°rage Temperature Range
^Operating Junction Temperature
T»tg
-65 to +150
°C
Tj
200
•C
HJERMAL CHARACTERISTICS
Quricteriitie
Mix
Symbol
Unit
MRF136
MRF136Y
.jjgrnal Resistance. Junction to Case
RSJC
3.2
1.75
•c/w
B and Packaging — MOS dsvicei are tutcaptibla to damage from elcctroitatic charg*. ft»«»on«bl« prectution* in handling and packaging MOS
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Quality Semi-Conductors