MRF10502 Datasheet, PDF (2/2 Pages) Tyco Electronics – MICROWAVE POWER TRANSISTOR NPN SILICON

ELECTRICAL CHARACTERISTICS (Jc = 25"C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (Ic = 60 mAdc, Vgrf = 0)
Collector-Base Breakdown Voltage (Ic = 60 mAdc, IE = 0)
V(BR)CES
V(BR)CBO
Emitter-Base Breakdown Voltage (Ig = 10 mAdc, Ic - 0)
Collector Cutoff Current (VCB = 36 Vdc. IE = 0)
V(BR)EBO
'CBO
ON CHARACTERISTICS
DC Current Gam (Ic = 5.0 Adc, Vcg = 5.0Vdc)
hFE
FUNCTIONAL TESTS
Common-Base Amplifier Power Gain
(Vcc = 50 Vdc. Pout = 500 W Peak, f = 1090 MHz)
GPB
Collector Efficiency
n
(Vcc = SO Vdc. Pout = 500 W Peak, f = 1 090MHz)
Load Mismatch
V
(Vcc = 50 Vdc, Pout = 500 W Peak, f = 1090MHz,
VSWR = 10:1 All Phase Angles)
Win
Typ
Max
Unit
65
—
—
Vdc
65
—
—
Vdc
3.5
—
—
Vdc
—
—
25
mAdc
20
8.5
9.0
—
dB
40
45
—
%
No Degradation in Output Power