MRF10502 Datasheet, PDF (1/2 Pages) Tyco Electronics – MICROWAVE POWER TRANSISTOR NPN SILICON

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, L/nc.
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MRF10502
Designed for 1025-1150 MHz pulse common base amplifier
applications such as TCAS, TACAN and Mode-S transmitters.
• Guaranteed performance @ 1090 MHz
Output power = 500 W peak
Gain = 8.5 dB min, 9.0 dB (typ.)
• 100% tested for load mismatch at all phase angles with 10:1 VSWR
• Hermetically sealed industry package
• Silicon nitride passivated
• Gold metalized, emitter ballasted for long life and resistance to
metal migration
• Internal input and output matching
• Characterized with 1Ou.s, 1 % duty cycle pulses
Product Image
CASE 355J-02,
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector C urrent — Peak ( 1 )
Total Device Dissipation @ TQ = 25°C (1 ), (2)
Derate above 25':'C
Symbol
VCES
VCBO
VEBO
IG
PD
Value
65
65
3.5
29
1460
8.3
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/'-'C
Storage Temperature Range
Junction Temperature
Tstg
-65to+200
i:C
Tj
200
'C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case (3)
RSJC
0.12
•c/w
NOTES:
1. Under pulse RF operating conditions-
2. These devices are designedfor RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF
amplifiers.
3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst case 6jc value
measured® 32 us, 2%.)
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished b> NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
VI Semi-Conductors encourages customers to verify that datasheets (ire current before placing orders.
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