MRF1001A Datasheet, PDF (2/3 Pages) Microsemi Corporation – RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

MRF1001A
FUNCTIINAL
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
U max
Maximum Unilateral Gain (1) 1C = 90 mAdc, VCE = 14Vdc,
f = 300 MHz
-
11.5
-
dB
MAG
Maximum Available Gain
1C = 90 mAdc, VCE = 14Vdc,
f = 300 MHz
-
11.7
-
dB
|S2lf
Insertion Gain
1C = 90 mAdc, VCE = 14Vdc,
f = 300 MHz
10
11.13
-
dB
Table 1. Common Emitter S-Parameters, @ VCE = 14 V, 1C = 90 mA
f
(MHz)
100
200
300
400
500
600
700
800
900
1000
si 1
|S11|
Zcj,
.165
-17
.113
-77
.061
63
.003
-49
,063
117
.069
140
.135
150
.179
144
.282
146
.362
132
«5'
|S21|
Z(j)
9.7
98
5.2
80
3.6
76
2.7
66
2.3
57
1.9
54
1.9
48
1.7
39
1.6
33
1.5
36
S19
|S12|
Z(|>
.058
79
.115
73
.169
76
.225
68
.281
61
.320
60
.397
58
.447
49
.476
44
.510
47
S99
|S22|
.411
.302
.298
.287
.235
.245
.232
.237
.215
.220
z<t>
-32
-36
-42
-67
-80
-90
-104
-124
-157
-177