MRF1001A Datasheet, PDF (1/3 Pages) Microsemi Corporation – RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

.zSsmi-donduakoi ZPiodudi, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
MRF1001A
TELEPHONE: [phone]
[phone]
FAX: [phone]
ELECTRICAL SPECIFICATIONS (Tease - 25°C)
STATIC
[Off]
Symbol
Test Conditions
BVCEO
BVEBO
BVCBO
ICBO
VCE(sat)
(on)
HFE
Collector-Emitter Breakdown Voltage
(1C = 5.0 mAdc)
Emitter-Base Breakdown Voltage
(IC= 0.1 mAdc)
Collector-Base Breakdown Voltage
(IC=1.0mAdc)
Collector-Base
(VCB= 10Vdc)
Collector-Emitter Saturation Voltage
(1C = 50mA, IC/IB = 10)
DC Current Gain
(1C = 50 mAdc, VCE = 5.0 Vdc)
DYNAMIC
Symbol
Test Conditions
fi
Current-Gain - Bandwidth Product
(1C = 90 mAdc, VCE = 14 Vdc, f = 300 MHz)
Value
Min.
Typ.
Max.
20
-
-
3.5
-
-
30
-
-
-
50
-
-
100
-
50
-
300
Unit
Vdc
Vdc
Vdc
MA
mV
-
Value
Min.
Typ.
Max.
Unit
-
3.0
-
GHz
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished b> NJ Semi-Conductors is believedto be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissionsdiscovered in its use.
\ Semi-Conductors enuniniges customers to verify that datasheets nre current before plating orders.