MMBR951L Datasheet, PDF (2/2 Pages) New Jersey Semi-Conductor Products, Inc. – Silicon NPN RF Transistor

Silicon NPN RF Transistor
MMBR951L
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO ^{Collector-Emitter Breakdown Voltage} lc= 0.1mA; IB=0
10
V
V(BR)CBO Collector-Base Breakdown Voltage
lc=0.1mA;lE=0
20
V
IEBO
Emitter Cutoff Current
VEB= 1V; lc= 0
0.1
uA
ICBO
Collector Cutoff Current
VCB=10V; IE=0
0.1
uA
hFE
DC Current Gain
lc= 5mA ; VCE= 6V
50
200
COB
Output Capacitance
|E=0 ; VCB= 10V; f= 1MHz
0.45 1.0
PF
fr
Current-Gain—Bandwidth Product
lc= 30mA ; VCE= 6V; f= 1GHz
8
GHz
I S2le I 2 ^{Insertion Power Gain}
I S21e |2 Insertion Power Gain
lc= 30mA ; VCE= 6V;f= 1 .OGHz
lc= 30mA ; VCE= 6V;f= 2. OGHz
12.5
dB
7.0
dB
GU max ^{Maximum Unilateral Gain}
lc= 30mA ; VCE= 8V;f= 1 .OGHz
14
dB
GUmax ^{Maximum Unilateral Gain}
NF
Noise Figure
lc= 30mA ; VCE= 8V;f= 2. OGHz
lc=5mA;VcE=6V;f=1GHz;
RG= 50 Q
8
dB
1.9
2.8
dB