MMBR951L Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – Silicon NPN RF Transistor

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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One.
Silicon NPN RF Transistor
TELEPHONE: [phone]
[phone]
FAX: [phone]
MMBR951L
DESCRIPTION
• Low Noise
• High Current-Gain Bandwidth Product
_
SOT-23 package
APPLICATIONS
• Designed for use in high gain , low noise small-signal
amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
20
V
VCEO ^{Collector-Emitter Voltage}
10
V
VEBO ^{Emitter-Base Voltage}
1.5
V
Ic
Collector Current-Continuous
Collector Power Dissipation
PC
@TC= 75"C
Tj
Junction Temperature
Tstg
Storage Temperature Range
100
mA
0.322
W
150
-C
-55-150
•c
H,M
•:-MI
t I^{t 1 : Base}
uk! _Hi U._L ^Marking
3 c _{2: Emitter}
*I
3: Collector
/\
M
L_up
m ,K I
ML
H
*
mm
DIM
WIN
MAX
A
0.37
0.51
B
1.19
1. 10
,"
L.
2.10
2.50
D
0.89
1.05
f
i-
1.7S
2,05
H
2.65
3.05
K
1, 1.0
1.30
L
0. 15
0.61
M
0.076 0. I7S
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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