MMBR920L Datasheet, PDF (2/2 Pages) Motorola, Inc – NPN SILICON HIGH FREQUENCY TRANSISTOR

Silicon NPN RF Transistor
MMBR920L
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO ^{Collector-Emitter Breakdown Voltage}
lc=1mA;lB=0
15
V
V(BR)CBO ^{Collector-Base Breakdown Voltage}
lc= 0.1mA; IE=0
20
V
V(BR)EBO ^{Emitter-Base Breakdown Voltage}
l6=0.1mA;lc=0
2
V
ICBO
Collector Cutoff Current
VCB=10V; IE=0
50
nA
hFE
DC Current Gain
lc=14mA;VCE=10V
25
250
COB
Output Capacitance
|E=0;VCB=10V;f= 1MHz
1.0
PF
ft
Current-Gain—Bandwidth Product
lc= 14mA ; VCE= 10V; f= O.SGHz
4.5
GHz
NF
Noise Figure
lc= 2mA ; VCE= 10V; f= O.SGHz
2.4
dB
NF
Noise Figure
lc=2mA;VCE=10V;f=1GHz
3.0
dB
Gpe
Common-Emitter Amplifier Power Gain lc= 2mA ; VCE= 10V; f= O.SGHz
Gpe
Common-Emitter Amplifier Power Gain lc=2mA;VcE=10V;f=1GHz
15
dB
10
dB