MMBR920L Datasheet, PDF (1/2 Pages) Motorola, Inc – NPN SILICON HIGH FREQUENCY TRANSISTOR

I
£/
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One.
Silicon NPN RF Transistor
TELEPHONE: [phone]
[phone]
FAX: [phone]
MMBR920L
DESCRIPTION
• Low Noise
NF= 2.4dB TYP. @ f= 500MHz
• High Gain
Gpe= 15dB TYP. @ f= 500MHz
SOT-23 package
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APPLICATIONS
• Designed for thick and thin-film circuits using surface mount
components and requiring low-noise , high-gain signal amp-
lification at frequencies to 1 GHz.
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
20
V
^ ^H• _{- • I,IhI} ^*
Marking B C _{2 : Emitter}
L J ! j U -ii ^{3: Collector}
kH
/
\
n)
u
c_
^J
h--|L
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
Ic
Collector Current-Continuous
Collector Power Dissipation
PC
@TC= 25'C
Tj
Junction Temperature
Tstg ^{Storage Temperature Range}
15
V
3
V
35
mA
0.35
W
150
•c
-55-150 •c
mm
DIM
MIN
MAX
A
0.37
0.31
B
1.19
1. 10
C
2.10
2.30
D
0. 39
1.05
C-
1.7S
2.05
H
2.65
3. 05
K
1. 10
1.30
L
0. IB
0.61
M
0.076
0. 17S
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