MMBR911L Datasheet, PDF (2/2 Pages) New Jersey Semi-Conductor Products, Inc. – Silicon NPN RF Transistor

Silicon NPN RF Transistor
MMBR911L
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO ^{Collector-Emitter Breakdown Voltage} lc= 1 mA ; !B= 0
12
V
V(BR)CBO Collector-Base Breakdown Voltage
lc= 0.1mA; IE= 0
20
V
V(BR)EBO ^{Emitter-Base BreakdownVoltage}
ICBO
Collector Cutoff Current
lE=0.1mA;lc=0
VCB=15V; IE=0
2
V
0.05 u A
MFE
DC Current Gain
lc= 30mA ;VCE= 10V
30
200
COB
Output Capacitance
ft
Current-Gain — Bandwidth Product
|E=0;VCB=10V;f=1MHz
IG= 30mA ; VCE= 10V; f= 1 GHz
GNF
Gain® Noise Figure
lc= 10mA ; VCE= 10V; f= O.SGHz
GNF
Gain@ Noise Figure
lc= 10mA ; VCE= 10V; f= 1GHz
NF
Noise Figure
lc= 10mA ; VCE= 10V; f= O.SGHz
1.0
PF
6.0
GHz
17
dB
11
dB
2.0
dB
NF
Noise Figure
lc= 10mA ; VCE= 10V; f= 1GHz
2.9
dB
Current Gain-Bandwidth versus
Collector Current @ 1.0 GHz
w 1C
Input Capacitance versus
Base-Emitter Voltage
2.5 r
I_'
I
1.5
1—
VCE = 10 v
0.5
' = 1 GHz —
io
;c
ac
II
I", COLLECTOR CURRENT (rrf.)
f=1MHz
VflE, BASE-EMITTER VOLTAGE iVoe;