MMBR911L Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – Silicon NPN RF Transistor

, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN RF Transistor
TELEPHONE: [phone]
[phone]
FAX: [phone]
MMBR911L
DESCRIPTION
• High Gain
GNF = 17 dB TYP. @ lc= 10 mA, f = 500 MHz
• Low Noise Figure
NF= 1.7dB TYP. @ f= 500 MHz
• High Current-Gain Bandwidth Product
fT = 6.0 GHz TYP. @ lc= 30 mA
SOT-23 package
APPLICATIONS
• Designed for low noise, wide dynamic range front-end
amplifiers and low-noise VCO'S.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO ^{Collector-Base Voltage}
20
V
VCEO ^{Collector-Emitter Voltage}
12
V
VEBO Emitter-Base Voltage
2
V
Ic
Collector Current-Continuous
Collector Power Dissipation
PC
@TC= 75'C
Tj
Junction Temperature
Tstg ^{Storage Temperature Range}
60
mA
0.333
W
150
•c
-55-150
°c
mm
DIM
WIN
MAX
_4
0.37
0.51
B
1.19
1. 10
C
2. 10
2. 50
D
0. 89
1.05
j-
IL-
1. 75
2.05
H
2.65
3.05
K
1, 10
1.30
L
0. 15
0.61
M
0.076
0. 178
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors