MMBR571L Datasheet, PDF (2/2 Pages) New Jersey Semi-Conductor Products, Inc. – Silicon NPN RF Transistor

Silicon NPN RF Transistor
MMBR571L
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO ^{Collector-Emitter Breakdown Voltage lc= 1mA; IB= 0}
V(BR)CBO Collector-Base Breakdown Voltage
lc= 0.1mA; IE= 0
V(BR)EBO ^{Emitter-Base Breakdown Voltage}
IE= 50 11 A ; lc= 0
ICBO
Collector Cutoff Current
VCB= 8V; IE= 0
hFE
DC Current Gain
lc= 30mA ; VCE= 5V
COB
Output Capacitance
lE=0;VCB=10V;f=1MHz
fy
Current-Gain—Bandwidth Product
lc= 50mA ; VCE= 5V; f= 1GHz
10
V
20
V
3
V
10
uA
50
300
0.7
1.0
pF
8
GHz
G NF ^{Gain@Noise Figure}
G NF ^{Gain@Noise Figure}
NF
Noise Figure
lc=10mA;VCE=5V;f=0.5GHz
16.5
dB
lc=10mA;VcE=5V;f=1GHz
10.5
dB
lc= 10mA ; VCE= 5V; f= 0.5GHz
2.0
dB
NF
Noise Figure
lc=10mA;VcE=5V;f=1GHz
2.6
dB
Maximum Available Gain versus Frequency
i^:
1
III
01
o
I«
"H" ^GAMAX
•± ; vik ^{± _ * '} t i
'
ul
!-5
^•sj.;
\
v _•v
v'C ^{E = 5 ' 1}
Ir = 3Cp A
3^2k ic
s
^"^v^
»
^**s
1
^_v
f FREQUENCY !GHz:>
H (0
t!>
Current Gain-Bandwidth versus
i^oi le -.tMI 1»uire in tj# I.U ^mi
^0
r
3o3
c$ 4
3;
JT i
(K
§•
/ ^f/
/
/
/
,x- _——
i
——, ~^.
"C
fc1^H7
^n
D
1D 2D 3D 40 5C £C 7C 0! 90 iQO
lc. COLLECTOR CURRENT inAi