MMBR571L Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – Silicon NPN RF Transistor

J
i., One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN RF Transistor
TELEPHONE: [phone]
[phone]
FAX: [phone]
MMBR571L
DESCRIPTION
• Low Noise
• High Current-Gain Bandwidth Product
fT = 8.0 GHz TYP. @ lc= 50 mA
• High Gain
GNF = 16.5 dB TYP. @ lc= 10mA, f = 0.5 GHz
_-""" ""--*_
SOT- 2 3 package
APPLICATIONS
• Designed for low noise , wide dynamic range front-end
amplifiers and low-noise VCO'S.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VGBO Collector-Base Voltage
20
V
VCEO Collector-Emitter Voltage
10
V
VEBO Emitter-Base Voltage
3
V
Ic
Collector Current-Continuous
Collector Power Dissipation
PC
@TC= 7sr
Tj
Junction Temperature
Tstg ^{Storage Temperature Range}
80
mA
0.33
W
150
'C
-55-150 •c
H_-II,_IM
Markbg
V-^A
t
II ^{1 -. Base}
sc
\M
-_L;_JE_.^m_L itter
3; Collector
1_{IP r-i} \ _{: i}
^t_l
|__|
1|
L. 1 1 i
K*|L
M
4 ^H
1—1
mm
DIM
WIN
MAX
A
0. 37
0.51
B
1.19
1. 10
C
2. 10
2.50
D
0. 39
1.05
L-
1. 7S
2.05
H
2. 65
3.05
K
1.10
1.30
L
0. 15
0.61
M
0.076
0. 17S
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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