MJH16006 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

Silicon NPN Power Transistor
MJH16006
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VcEO(SUS)
Collector-Emitter Sustaining Voltage lc=100mA; IB=0
450
V
VcE(sat)-i ^{Collector-Emitter Saturation Voltage lc= 3A; IB= 0.4A}
VcE(sat)-2
VeE(sat)
ICEV
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
lc= 5A; IB= 0.66A
lc=5A; IB=0.66A,TC=100'C
lc= 5A; IB= 0.66A
lc=5A; IB=0.66A,TC=100'C
VCEv=850V;VBE(off)=1.5V
VcEv=850V;VBE(off)=1 .5V;TC=100°C
IGER
Collector Cutoff Current
VCE= 850V; RBE= 50 n ,TC= 100'C
2.5
V
3.0
3.0
V
1.5
1.5
V
0.25
1.5
mA
2.5 mA
IEBO
Emitter Cutoff Current
VEB= 6V; lc=0
1.0 mA
hFE
DC Current Gain
lc= 8A ; VCE= 5V
5
COB
Output Capacitance
Switching times;Resistive Load
td
Delay Time
tr
Rise Time
ts
Storage Time
tf
Fall Time
lE=0;VCB=10V;f,est=1.0kHz
lc= 5A , Vcc= 250V; RB2= 4 Q ;
IB1= 0.66A; IB2= -1 .3A;PW= 30 u s;
Duty Cycle =S 2.0%
350 PF
20
50
ns
85 250 ns
1000 2500 ns
70 250 ns