MJH16006 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

, Dnc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
TELEPHONE: [phone]
[phone]
FAX: [phone]
MJH16006
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
: VCECXSUS) = 450V(Min)
• High Switching Speed
APPLICATIONS
• Designed for high-voltage .high-speed, power switching in
inductive circuits where fall time is critical. They are partic-
ularly suited for line operated switch-mode applications.
Typical applications:
• Switching regulators
• Inverters
• Solenoid and relay drivers
• Motor controls
• Deflection circuits
i
1 23
PIN 1.BASE
2. COLLECTOR
3. EMI TIER
TO-3PN package
«.
ABSOLUTE MAXIMUM RATINGS(Ta=250C)
SYMBOL
PARAMETER
VALUE
UNIT
VCEV Collector-Emitter Voltage
VcEO(SUS) Collector-Emitter Voltage
VEBO Emitter-Base Voltage
Ic
Collector Current-Continuous
I CM
Collector Current-Peak
IB
Base Current-Continuous
IBM
Base Current-Peak
Collector Power Dissipation
PC
@T0=25'C
Tj
Junction Temperature
Tstg
Storage Temperature
850
V
450
V
6
V
8
A
16
A
6
A
12
A
125
W
150
'C
-65-150 'C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c ^{Thermal Resistance, Junction to Case}
MAX
1.0
UNIT
•c/w
G -wl'*- L
mm
DIM WIN MAX
A 19.90 20.10
B 15.50 15.70
C 4.70 4.90
D 0.90 1.10
E 1.90 2.10
F 3.40 3.60
G 2.90 3.10
H 3.20 3.40
J 0.595 0.605
K 20.50 20.70
L 1.90 2.10
N 10.89 10.91
q 4.90 5.10
R 3.35 3.45
s 1.995 2.005
u 5.90 6.10
Y 9.90 10.10
-»— 0
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished b> N.I Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
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