MJH13090 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistors

Silicon NPN Power Transistors
MJH13090/13091
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
MJH 13090
400
Collector-Emitter
VcEO(SUS) _{Sustaining Voltage}
i~— ifirirviA • ir,—n
MJH13091
450
VcE(sat)-l
Collector-Emitter Saturation Voltage
IG= 10A; IB=2A
IC=10A;IB=2A;TC=100°C
VcE(sat)-2 ^{Collector-Emitter Saturation Voltage IC=15A;IB=3A}
VeE(sat)
ICEV
Base-Emitter Saturation Voltage
Collector
Cutoff Current
MJH13090
MJH13091
IC=10A;IB=2A
lc=10A;lB=2A;Tc=100-C
VCEv=650V;VBE(off)=1.5V
VcEv=650V;VBE<off)=1 .5V;TC=1 00 'C
VcEv=750V;VBE(off)=1.5V
VcEv=750V;VBE(off)=1 .5V;TC=100'C
Collector
ICER
Cutoff Current
MJH13090 VCE= 650V; RBE= 50 Q ,TC= 100'C
MJH 13091 VCE= 750V; RBE= 50 O ,TC= 1 00 "C
V
1.0
V
2.0
3.0
V
1.5
1.5
V
0.5
2.5
mA
0.5
2.5
3.0
mA
3.0
IEBO
Emitter Cutoff Current
hFE
DC Current Gain
VEB= 6V; lc=0
lc=10A;VCE=3V
1.0 mA
8
COB
Output Capacitance
Switching times;Resistive Load
td
Delay Time
tr
Rise Time
ts
Storage Time
tf
Fall Time
lE=0;VcB=10V;ftest=1.0kHz
lc=10A,VCc=250V;
Duty Cycle<2.0%
350 PF
30 50
ns
130 500 ns
550 2500 ns
100 500 ns