MJH13090 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistors

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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistors
TELEPHONE: [phone]
[phone]
MJH13090/13091
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
: VCEo(sus) = 400V(Min)—MJH13090
= 450V(Min)—MJH13091
• High Switching Speed
APPLICATIONS
• Designed for high-voltage .high-speed, power switching in
inductive circuits where fall time is critical. They are partic-
ularly suited for line operated switch-mode applications.
Typical applications:
• Switching regulators
• Inverters
• Solenoid and relay drivers
• Motor controls
• Deflection circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE
UNIT
i
1 23
PIN 1.BASE
1. COLLECTOR
3. EMI TIER
TO-3PN package
tt]
VCEV
Collector-Emitter
Voltage
MJH13090
650
MJH13091
750
V
Collector-Emitter
MJH 13090
400
VcEO(SUS) _Voltage
V
MJH13091
450
VEBO
Ic
ICM
IB
IBM
PC
Tj
Tstg
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Base Current-Peak
Collector Power Dissipation
@TC=25'C
Junction Temperature
Storage Temperature
6
V
15
A
20
A
5
A
10
A
125
W
150
"C
-65-150 °c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c ^{Thermal Resistance.Junction to Case}
MAX
1.0
UNIT
"C/W
mm
DIM MIN MAX
A 19.90 20.10
B 15.50 15.70
C 4.70 4.90
D 0.90 1.10
E 1.90 2.10
F 3.40 3.60
G 2.90 3.10
H 3.20 3.40
J 0.595 0.605
K 20.50 20.70
L 1.90 2.10
N 10.89 10.91
q 4.90 5.10
R 3.35 3.45
S 1.995 2.005
U 5.90 6.10
Y 9.90 10.10
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information Furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in itsuse.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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