MJH11018 Datasheet, PDF (2/2 Pages) New Jersey Semi-Conductor Products, Inc. – Silicon NPN Darlington Power Transistor

Silicon NPN Darlington Power Transistor
MJH11018
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VcEO(SUS) ^{Collector-Emitter Sustaining Voltage} lc= 100mA, IB=0
150
V
VcE(sat)-1 ^{Collector-Emitter Saturation Voltage IC=10A,IB=0.1A}
VcE(sat)-2 ^{Collector-Emitter Saturation Voltage IC=15A,IB=0.15A}
VsE(sat) ^{Base-Emitter Saturation Voltage}
IC=15A,IB=0.15A
VeE(on) ^{Base-Emitter On Voltage}
ICEV
Collector Cutoff Current
ICEO
Collector Cutoff Current
lc=10A;VcE=5V
VcEV=150V;VBE(off)=1.5V
VCEv=150V;VBE(off)=1 >5V;TC=150 'C
VCE= 75V, IB=0
2.5
V
4.0
V
3.8
V
2.8
V
0.5
5.0
mA
1
mA
IEBO
Emitter Cutoff Current
hpE.1
DC Current Gain
VEB= 5V; lc=0
IC=10A;VCE=-5V
2
mA
400
15000
hFE-2
DC Current Gain
lc=15A;VCE=-5V
100
COB
Output Capacitance
Switching times
td
Delay Time
tr
Rise Time
ts
Storage Time
tf
Fall Time
lE=0;VCB=10V,f=0.1MHz
lc=10A,VCc=100V;
IB= 0.1A; VBE(off)= 5V;
Duty Cycle<2.0%
400
PF
150
ns
1.2
us
4.4
ws
2.5
us