MJH11018 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – Silicon NPN Darlington Power Transistor

, One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Darlington Power Transistor
TELEPHONE: [phone]
[phone]
FAX: [phone]
MJH11018
DESCRIPTION
• High DC Current Gain-
: hFE = 400(Min)@lc=10A
• Collector-Emitter Sustaining Voltage-
: VCEo(sus)=150V(Min)
• Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 2.5V(Max)@ lc= 10A
= 4.0V(Max)@lc=15A
• Complement to Type MJH11017
APPLICATIONS
• Designed for general purpose amplifiers ,low frequency
switching and motor control applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
150
V
VCEO
Collector-Emitter Voltage
150
V
VEBO
Emitter-Base Voltage
5
V
Ic
Collector Current-Continuous
15
A
ICM
Collector Current-Peak
30
A
IB
Base Current- Continuous
Collector Power Dissipation
PC
T}
Junction Temperature
Tstg
Storage Temperature Range
0.5
A
150
W
150
•c
-65-150
r
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
c/w Thermal Resistance, Junction to Case 0.83 g
i
R1
1 23
2.COLLECTOR
3. EMITTER
TO-3PN package
HiL~"Y-*>-F-"s
—J
R
mm
DIM WIN MAX
A 19.90 20.10
B 15.50 15.70
C 4.70 4.90
D 0.90 1.10
E 1.90 2.10
F 3.40 3.60
G 2.90 3.10
H 3.20 3.40
J 0.595 0,605
K 20.50 20.70
L 1.90 2.10
N 10.89 10.91
Q 4.90 5.10
R 3.35 3.45
S 1.995 2.005
U 5.90 6.10
Y 9.90 10.10
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to he both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in itsuse.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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