MJH10012 Datasheet, PDF (2/2 Pages) Savantic, Inc. – Silicon NPN Power Transistors

MJ10012MJH10012
ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS (1)
Collector-Emitter Sustaining Voltage (Figure 1 )
(IC = 200 mAdc, IB = 0, Vc|amp = Rated VCEO)
Collector-Emitter Sustaining Voltage (Figure 1 )
(IC = 200 mAdc, RBE = 27 Ohms, Vc|amp = Rated VCER)
Collector Cutoff Current (Rated VCER, RBE = 27 Ohms)
Collector Cutoff Current (Rated VCBO, 'E ~ °)
Emitter Cutoff Current (VEB = 6.0 Vdc, Ic = 0)
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 3.0 Adc, VCE = 6 0 Vdc)
(IC = 6.0 Adc, VCE = 6.0 Vdc)
(IC = 10 Adc, VCE = 6.0 Vdc)
Symbol
vCEO(sus)
vCER(sus)
!CER
!CBO
'EBO
hFE
Collector-Emitter Saturation Voltage
(IC = 3.0Adc, IB = 0.6 Adc)
(IC = 6.0 Adc, IB = 0.6 Adc)
Oc = 10 Adc, IB = 2.0 Adc)
VCE(sat)
Base Emitter Saturation Voltage
(IC = 6.0 Adc, IB = 0.6 Adc)
(IC = 10 Adc, IB = 2.0 Adc)
VBE(sat)
Base Emitter OnVoltage (Ic = 10 Adc, VCE =6 ° vdc)
Diode Forward Voltage (Ip = 10 Adc)
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 100 kHz)
vBE(on)
Vf
Cob
SWITCHING CHARACTERISTICS
Storage Time
Fall Time
(Vcc = 12 Vdc, lc = 6.0Adc,
IB1 = IB2 = 0.3 Adc) Figure 2
FUNCTIONAL TESTS
Second Breakdown Collector Current with
Base-Forward Biased
Pulsed Energy Test (See Figure 12)
(1) Pulse Test: Pulse Width = 300 us, Duty Cycle = 2%.
ts
tf
!S/B
lC2L/2
Win
Typ
Max
Unit
400
—
425
—
—
—
—
—
—
—
—
Vdc
—
Vdc
1.0
mAdc
1.0
mAdc
40
mAdc
—
300
550
—
100
350
2000
20
150
—
Vdc
—
—
15
—
2.0
—
—
2.5
Vdc
—
—
2.5
—
—
3.0
—
—
2.8
Vdc
—
2.0
3.5
Vdc
165
350
PF
—
75
15
US
—
5.2
15
MS
See Figure 10
—
—
—
180
mj
VCC=14V
ADJUST UNTIL \Q = 6 A
* Adjust t-| such that Ic reaches 200 mA at VCE = vclamp
Figure 1. Sustaining Voltage
Test Circuit
Figure 2. Switching Times
Test Circuit