MJH10012 Datasheet, PDF (1/2 Pages) Savantic, Inc. – Silicon NPN Power Transistors

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SPRINGFIELD, NEW JERSEY 07081
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NPN Silicon Power Darlington
Transistor
The MJ10012 and MJH10012 are high-voltage, high-current Darlington transistors
designed for automotive ignition, switching regulator and motor control applications.
• Collector-Emitter Sustaining Voltage —
VcEO(sus) = 400 Vdc (Min)
• 175 Watts Capability at 50 Volts
• Automotive Functional Tests
BASE
MJ10012
MJH10012
10 AMPERE
POWER TRANSISTORS
DARLINGTON NPN
SILICON
400 VOLTS
175 AND 118 WATTS
EMITTER
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage
(RBE = 27H)
Collector-Base Voltage
Emitter-Base Voltage
Collector Current — Continuous
— Peak(1)
Base Current
Total Power Dissipation
@ TC = 25°C
@Tc = 100°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCER
MJ10012 MJH10012 Unit
400
Vdc
550
Vdc
VCBO
VEBO
ic
IB
PD
Tj, Tstg
600
Vdc
8.0
Vdc
10
Adc
15
2.0
Adc
175
118
Watts
100
47.5
Watts
1.0
1.05
W/°C
-65to+200 -55 to +150 "C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance, Junction to Case _R0JC
1.0
0.95
Maximum Lead Temperature for
Soldering Purposes: 1/8" from
Case for 5 Seconds
TL
275
275
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle < 10%.
Unit
°C/W
"C
(TO-3)
MJ10012
TO-218TYPE
MJH10012
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notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors entourages customers to verify that datasheets are current before placing orders.
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