MJF44H11 Datasheet, PDF (2/2 Pages) ON Semiconductor – Complementary Power Transistors

Silicon NPN Power Transistors
MJF44H11
ELECTRICAL CHARACTERISTICS
Tc=25*C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
VcEO(SUS) ^{Collector-Emitter Sustaining Voltage} lc= 30mA; IB= 0
80
V
VcE(sat) ^{Collector-Emitter Saturation Voltage IC=8A;IB=0.4A}
VeE(sat) ^{Base-Emitter Saturation Voltage}
IC=8A;IB=0.8A
ICES
Collector Cutoff Current
VCE=Rated VCEO;
1.0
V
1.5
V
1.0
uA
IEBO
Emitter Cutoff Current
VEB= 5V; lc= 0
10
uA
hpE-1
DC Current Gain
lc=2A;VCE=1V
60
hFE-2
DC Current Gain
lc=4A; VCE= 1V
40
COB
Output Capacitance
VCB=10V, f= 0.1 MHz
130
PF
fr
Current-Gain—Bandwidth Product lc= 0.5A; VCE= 10V; ftest=20MHz
50
MHz
Switching Times
ton
Turn-On Time
ts
Storage Time
tf
Fall Time
lc= 5A; IB1= 0.5A
0.3
us
0.5
us
0.14
us