MJF44H11 Datasheet, PDF (1/2 Pages) ON Semiconductor – Complementary Power Transistors

, Dna.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistors
TELEPHONE: [phone]
[phone]
FAX: [phone]
MJF44H11
DESCRIPTION
• Low Collector Saturation Voltage-
• »UE(sat) i .VV^IVICIA./^ ic ""
• Fast Switching Speeds
• Complement to Type MJF45H11
APPLICATIONS
• Designed for general purpose power amplification and
switching such as output or driver stages in applications
such as switching regulators, converters and power amplifier.
^m _{' P'}
123
3 _{PIN 1.BASE}
2 COLLECTOR
3. EMITTER
TO-220F package
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE
VCEO ^{Collector-Emitter Voltage}
80
UNIT
V
B-
•") ,-••- 0 Q
:- "' ' '
;-: :..: rJ ^{F ,-~i " - •' i- •,}
- C-
-s-
f
1
'
' ' < 0 • - , ol'
y i " •: .: " I
-
..r
:
;
'
:⁽ A
VEBO
Ic
ICM
PC
Tj
Tstg
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Collector Power Dissipation
@TC=25"C
Collector Power Dissipation
@Ta=25t:
Junction Temperature
Storage Temperature Range
5
V
10
A
20
A
36
W
2
150
"C
-55-150 "C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
3.5 •c/w
Thermal Resistance,Junction to Ambient 62.5 •c/w
*
» ;'
1
,
L
, r^: ;^: J^; . ,
H_•
- R-
, , , . ' ;^! ,^:
i;
K
]:
- -o
j ,,
- N-
mm
DIM WIN MAX
A 14.95 15.05
B 10.00 10.10
C 4.40 4.60
D 0.75 0.80
F 3.10 3.30
H 3.70 3.90
J 0.50 0-70
K 13.4 13.6
L 1.10 1.30
N 5.00 5.20
Q 2.70 2.90
R 2.20 2.40
S 2.65 2.85
U 6.40 6.60
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensionswithout
notice. Information furnished by N.I Semi-Conductors is believed to he both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in itsuse.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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