MJF18006 Datasheet, PDF (2/2 Pages) Savantic, Inc. – Silicon NPN Power Transistors

Silicon NPN Power Transistor
MJF18006
ELECTRICAL CHARACTERISTICS
Tj=25'C unless otherwise specified
SYMBOL
PARAMETER
VcEO(SUS) Collector-Emitter Sustaining Voltage
VcE(sat)-i ^{Collector-Emitter Saturation Voltage}
VcE(sat)-2 ^{Collector-Emitter Saturation Voltage}
VBE(sat)-1 ^{Base-Emitter Saturation Voltage}
vBE(sat)-2 ^{Base-Emitter Saturation Voltage}
ICES
Collector Cutoff Current
CONDITIONS
lc=0.1A;L=25mH
IC=1.5A;IB=0.15A
TC=125°C
IC=3A;IB=0.6A
TC=125'C
IC=1.5A;IB=0.15A
lc= 3A; IB= 0.6A
VcES=RatedVCES; VEB= 0
TC=125'C
VCES=800VTc=125'C
MIN TYP MAX UNIT
450
V
0.6
0.65
V
0.7
0.8
V
1.2
V
1.3
V
0.1
0.5
mA
0.1
ICEO
Collector Cutoff Current
VCE= RatedVcEo; le=0
0.1 mA
IEBO
Emitter Cutoff current
VEB= 9V; lc=0
0.1 mA
hFE-1
hFE-2
DC Current Gain
DC Current Gain
lc= 0.5A ; VCE= 5V
lc=3A;VCE=1V
14
34
6
hFE-3
DC Current Gain
lc=1.5A;VcE=1V
11
hFE-4
DC Current Gain
lc=10mA;VcE=5V
10
fr
Current-Gain — Bandwidth Product
lc= 0.5A;VCE=10V; ftest=1.0MHz
14
MHz
COB
Output Capacitance
lE=0;VCB=10V;ftest=1.0MHz
Switching Times Resistive Load,Duty Cycled 10%,Pulse Width=20u s
75
PF
ton
Turn-on Time
toff
Turn-off Time
ton
Turn-on Time
toff
Turn-off Time
VCc= 300V ,lc= 3A
IB1=0.6A;IB2=1.5A
Vcc=300V,lc=1-3A
IB1=0.13A; IB2=0.65A
90 180 ns
1.7 2.5 u s
0.2
0.3
|J S
1.2 2.5 u s