MJF18006 Datasheet, PDF (1/2 Pages) Savantic, Inc. – Silicon NPN Power Transistors

^Szmi-Conduetoi ^Products., {Inc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
TELEPHONE: [phone]
[phone]
FAX: [phone]
MJF18006
DESCRIPTION
• Collector-Base Breakdown Voltage-
2
:V(BR)CBO=1000V(Min)
• High Switching Speed
APPLICATIONS
• Designed for use in 220V line-operated switchmode power
supplies and electronic light ballasts
^^fW^P<
j
123
PIN _21..BCAO3SLLEECTOR
3.a/llTTER
TO-220F package
ABSOLUTE MAXIMUM RATINGS(Ta=25 C)
B-
- C-
-S-
t
1
SYMBOL
PARAMETER
VALUE UNIT _{F : : O : * '; "r ^C1^1'}
VCBO ^{Collector-Base Voltage}
1000
V
fV'J. -..'•::')
-..,'.'!
|A
*•
I
VCEO Collector-Emitter Voltage
450
V
i
i;
\*\
T
VEBO Emitter-Base Voltage
9 V _{L-MM, " -R. ,...\}
Ic
Collector Current -Continuous
6
A
K
:
I CM
Collector Current-Peak
15
A
IB
Base Current
4
A
IBM
Base Current-Peak
8
A
PD
Total Power Dissipation@Tc-25 C
40
W
Tj
Junction Temperature
Tstg
Storage Temperature
150
r
-65-150 r
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Rresistance.Junction to Case 3.12 "C/W
Thermal Resistance, Junction to Ambient 62.5 °C/W
i.., ..,
"0
- N-
»
j„
,MI
-
,,:
mm
DIM WIN
A 14.95
B 10.00
C 4.40
D 0.75
F 3.10
H 3.70
J 0.50
K 13.4
L 1.10
N 5.00
Q 2.70
R 2.20
S 2.65
II 6.40
MAX
15.05
10.10
4.60
0.80
3.30
3.90
0.70
13.6
1.30
5.20
2.90
2.40
2.85
6.60
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensionswithout
notice. Information Furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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