MJF13009 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

Silicon NPN Power Transistor
MJF13009
ELECTRICAL CHARACTERISTICS
Tc =25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VcEO(SUS) Collector-Emitter Sustaining Voltage ^{lc=10mA; IB= 0}
400
V
VcE(sat)-i ^{Collector-Emitter Saturation Voltage IC=5A;IB=1A}
VcE(sat)-2 ^{Collector-Emitter Saturation Voltage lc=8A;lB=1.6A}
VcE(sat)-3 ^{Collector-Emitter Saturation Voltage IC=12A;IB=3A}
VBE(sat)-1 ^{Base-Emitter Saturation Voltage}
IC=5A;IB=1A
VBE(sat)-2 ^{Base-Emitter Saturation Voltage}
ICEV
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC=8A;IB=1.6A
VCEV= 700V VBE(off)= 1 5V
TC=100'C
VEB= 9V; lc= 0
1.0
V
1.5
V
3.0
V
1.2
V
1.6
V
1
5
mA
1
mA
hpE-1
DC Current Gain
lc= 5A; VCE= 5V
8
40
hpE-2
DC Current Gain
lc= 8A; VCE= 5V
6
30
fr
Current-Gain—Bandwidth Product lc=0.5A;VCE=10V;
4
MHz
COB Output Capacitance
IE= 0; VCB= 10V; ftest = 0.1 MHz
180
PF
Switching Times; Resistive Load
ton
Storage Time
ts
Storage Time
tf
Fall Time
Ic- 8A; VGC- 1 25V;
lsi= lB2= 1.6A; tp=25us;
Duty Cycled 1%
1.1 us
3.0 us
0.7 us