MJF13009 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
usA
Silicon NPN Power Transistor
TELEPHONE: [phone]
[phone]
MJF13009
DESCRIPTION
• Collector-Emitter Sustaining Voltage
: VCEO(SUS) = 400V(Min.)
• Collector Saturation Voltage
:VCE(sat) = 1.5(Max)@lc=8.0A
2
• Switching Time
: tf= 0.7 u s(Max.)@ lc= 8.0A
APPLICATIONS
• Designed for use in high-voltage, high-speed, power swit-
ching in inductive circuit, they are particularly suited for
115 and 220V switchmode applications such as switching
regulators, inverters, Motor controls.Solenoid/Relay drivers
and deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE
VCEV
Collector-Emitter Voltage
700
UNIT
V
WW
f f?f'
12 3
B-
r_[':•n_' ^•,v^-
- --' .'-.
,..:-:J
'
3
PIN t.BASE
2. COLLECTOR
3. EMITTER
TO-220F package
-c-
" ~~" -n~~7n' : ^-S-
f
\ .,-;o Q *
r
. u; i ; "
-..,v ;
A
VCEO
VEBO
Ic
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
400
V
'
— 1 1 >« ' —.*-• 'i »..^^~»T-»-^«. <
9
V
U_L -_,-_. •_{, . ,} H_{' -} o_{R •}'
-,-..,;,
12
A
K
;:
ICM
Collector Current-peak
IB
Base Current
'|BM
Base Current-Peak
Collector Power Dissipation
PC
TC=25'C
TI
Junction Temperature
Tstg
Storage Temperature Range
24
A
6
A
12
A
50
W
150
'C
-65-150 •c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance.Junction to Case
2.5 •c/w
Thermal Resistance.Junction to Ambient 62.5 •c/w
- -D
- H ••
j .,
mm
DIM MIN MAX
A 14.95 15.05
B 10.00 10.10
C 4.40 4.60
D 0.75 0.80
F 3.10 3.30
H 3.70 3.90
J 0.50 0.70
* K 13.4 13.6
L 1.10 1.30
N 5.00 5.20
C! 2.70 2.90
R 2.20 2.40
S 2.65 2 85
U4 6.40 6.60
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notice. Information Furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in itsuse.
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