MJE3440 Datasheet, PDF (2/2 Pages) STMicroelectronics – SILICON NPN TRANSISTOR

MJE3440
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
8.33
°C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)
Symbol
ICBO
ICEV
ICEO
Parameter
Collector Cut-off
Current (IE = 0)
Collector Cut-off
Current (VBE = -1.5V)
Collector Cut-off
Current (IB = 0)
Test Conditions
VCB = 250 V
VCE = 300 V
VCE = 200 V
Win. Typ.
IEBO
Emitter Cut-off Current _{VEB = 5 V}
(lc-0)
Collector-Emitter
Vce(sat)* _{Saturation Voltage}
Ic = 50 mA
VeE(sat)*
Base-Emitter
Saturation Voltage
Ic = 50 mA
VBE* Base-Emitter Voltage Ic = 50 mA
hpE* DC Current Gain
Ic = 2 mA
lc'= 20 mA
Small Signal Current lc = 5 mA
hfe
Gain
f = 1 KHz
tr
Transistor Frequency
Ic = 10 mA
f = 5 MHz
Collector-Base
CCBO* _Capacitance
VCB = 10V
f = 1 MHz
• Pulsed: Pulse duration = 3QQus, duty cycle < 1.5 %
IB = 4 mA
IB = 4 mA
V C E = 10 V
VCE = 10 V 30
V C E = 10 V 50
VCE = 10 V ₂₅
VCE = 10 V ₁₅
lE=0
Max.
20
500
50
20
0.5
0.3
0.8
200
10
Unit
uA
UA
uA
uA
V
V
V
MHz
PF
Safe Operating Area
ic(AJ
B
4
2
10-'
D
&
4
2
GC73030
--H
Ic MAX
PULSED
!
PULSE OPERATION •
QMS
lc MAX
COHT
£^{Vs X ss\}
200^s
500 ^s
•^
DC OPERATION ^\
1 ms
1
^
* For single non
\
'epelilive put 6
in'2
2
10'
tee.
i
10'
t e H.
(V)
Derating Curve
100
50
100