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MJE3440 Datasheet, PDF (1/2 Pages) STMicroelectronics – SILICON NPN TRANSISTOR
(IEIISU tSs-mi-Conductot Lpioaucti, L/na.
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t/
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.SA
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
MJE3440
SILICON NPN TRANSISTOR
. NPN TRANSISTOR
DESCRIPTION
The MJE3440 is a NPN silicon epitaxial planar
transistors in SOT-32 plastic package. It is
designed for use in consumer and industrial
line-operated applications.
SOT-32
INTERNAL SCHEMATIC DIAGRAM
Co (2)
F6(3)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCBO Collector-Base Voltage (IE = 0)
VCEO Collector-Emitter Voltage (la = 0)
VEBO Emitter-Base Voltage (lc = 0)
Ic Collector Current
IB Base Current
Plot Total Power Dissipation at Tease < 25 °C
Tstg Storage Temperature
T, Max. Operating Junction Temperature
Value
Unit
350
V
250
V
5
V
0.3
A
0.15
A
15
W
-65 to +150
°C
150
°C
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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