MJE18006 Datasheet, PDF (2/2 Pages) Motorola, Inc – POWER TRANSISTOR 6.0 AMPERES 1000 VOLTS 40 and 100 WATTS

Silicon NPN Power Transistor
MJE18006
ELECTRICAL CHARACTERISTICS
Tj=25 C unless otherwise specified
SYMBOL
PARAMETER
VcEO(SUS)
Collector-Emitter Sustaining Voltage
VcE(sat)-1 ^{Collector-Emitter Saturation Voltage}
VcE(sat)-2 ^{Collector-Emitter Saturation Voltage}
VBE(sat)-1 ^{Base-Emitter Saturation Voltage}
CONDITIONS
lc=0,1A;L=25mH
IC=1-5A;IB=0.15A
TC=125"C
lo=3A;lB=0.6A
TC=125'C
lc= 1.5A; IB=0.15A
MIN TYP MAX UNIT
450
V
0.6
0.65
V
0.7
0.8
V
1.2
V
VBE(sat)-2 ^{Base-Emitter Saturation Voltage}
ICES
Collector Cutoff Current
lc= 3A; IB= 0.6A
VcES=RatedVCES; VEB= 0
TC=125'C
VCES=800VTC=125'C
1.3
V
0.1
0.5
mA
0.1
ICEO
Collector Cutoff Current
VCE= RatedVceo; ln=0
0.1 mA
IEBO
Emitter Cutoff current
VEB= 9V; lc=0
0.1 mA
hpE-1
DC Current Gain
lc= 0.5A ; VCE= 5V
14
34
hpE-2
DC Current Gain
lc=3A;VCE=1V
6
hFE-3
DC Current Gain
IC=1.5A;VCE=1V
11
hFE-4
DC Current Gain
fr
Current-Gain—Bandwidth Product
lc=10mA;VCE=5V
10
lc= 0.5A; VCE=10V; ftes,=1.0MHz
14
MHz
COB
Output Capacitance
lE=0;VCB=10V;ftes,=1.0MHz
75
PF
Switching Times Resistive Load.Duty Cycle's 10%,Pulse Width=20 u s
ton
Turn-on Time
toff
Turn-off Time
ton
Turn-on Time
toff
Turn-off Time
Vcc= 300V ,lc= 3A
IB1=0.6A;IB2=1.5A
Vcc=300V,lc=1.3A
IB1=0.13A; IB2=0.65A
90 180 ns
1.7 2.5 u s
0.2
0.3
us
1.2
2.5
us