MJE18006 Datasheet, PDF (1/2 Pages) Motorola, Inc – POWER TRANSISTOR 6.0 AMPERES 1000 VOLTS 40 and 100 WATTS

^zml-tonauctoi U^i
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Lfnc.
Silicon NPN Power Transistor
TELEPHONE: [phone]
[phone]
FAX: [phone]
MJE18006
DESCRIPTION
• Collector-Base Breakdown Voltage-
:V(BR)CBO=1000V(Min)
• High Switching Speed
APPLICATIONS
• Designed for use in 220V line-operated switchmode power
supplies and electronic light ballasts
123
PIN 1.BASE
2.COLLECTOR
3.BWIITTER
TO-220C package
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
1000
V
VCEO Collector-Emitter Voltage
450
V
VEBO Emitter-Base Voltage
9
V
Ic
Collector Current -Continuous
6
A
ICM
Collector Current-Peak
15
A
IB
Base Current
4
A
IBM
Base Current-Peak
8
A
PD
Total Power Dissipation@Tc=25°C
100
W
Tj
Junction Temperature
Tsig
Storage Temperature
150
'C
-65-150
'C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Rresistance, Junction to Case 1.25 'C/W
Thermal Resistance, Junction to Ambient 62.5 "CM/
B >-\j
WF^
aoi-.i
K
i
J=3
mm
DIM ^M w^Ii^Un MAX
A 15.70 15.90
B 9.90 10.10
C 4.20 4.40
D 0.70 0.90
F 3.40 3.60
G 4.98 5.18
H 2.70 2.90
J 0.44 0.46
K 13.20 13.40
L 1.10 ^1.30
0 2.70 2.90
R 2.50 _2.70
s 1.29 1.31
u 6.45 6.65
V 8.66 8.86
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors