MJ10008 Datasheet, PDF (2/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(20A,400-500V,175W)

ELECTRICAL CHARACTERISTICS ( Tc = 25"C unless otherwise noted )
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector - Emitter Sustaining Voltage
(lc = 100mA,lB = 0 , V c | = R a t e V C E O )
MJ10008
vCEO<sus)
450
MJ10009
500
Collector Cutoff Current
CER
( VCE= Rated ^^.R^SO ohm,Tc=100°C)
Collector Cutoff Current
( VCEV= Rat"" Value.VBE<oFFf1-5 V )
'cEV
( VCEV= Rated Value,VBE(0|!F)=1.5 V, TC=100°C)
Emitter Cutoff Current
IEBO
( VEB = 2.0 V , lc * 0 )
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 5.0A,VCE = 5.0V)
(IC=10A,VCE = 5.0V)
Collector - Emitter Saturation Voltage
(le=10A,lB = 500mA)
( lc = 20 A, IB ~ 2.0 A )
( lc = 10 A, IB = 500 mA,Tc=100°C )
Base - Emitter Saturation Voltage
(lc=10A,lB=500mA)
( lc = 10 A, IB =500 mA, TC=100°C )
Diode Forward Voltage
( IF = 10 A)
hFE
40
30
VCE,-«
v-«
^
DYNAMIC CHARACTERISTICS
Small-Signal Current Gain(2)
( lc = 1.0 A, VCE = 10 V, f = 1.0 MHz )
Output Capacitance
0/^=10 V, IE=0, f =100 kHz )
\*«
8.0
c*
100
SWITCHING CHARACTERISTICS
Delay Time
)/£,. = 2SQV, IC = 10A
*d
Rise Time
I^SOOmAVB^S-OV
<r
Storage Time
tp = 50us,Duty Cyde < 2%
*»
Fall Time
tf
(1) Pulse Test: Pulse width = 300 us , Duty Cyde 5 2.0%
(2)fT- lhr.| •'•-
MJ10008, MJ10009, NPN
Max
Unit
V
mA
5.0
0.25
mA
5.0
mA
175
400
300
V
2.0
3.5
2.5
V
2.5
2.5
V
5.0
pF
0.25
us
1.5
us
2.0
us
0.6
us