MJ10008 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(20A,400-500V,175W)

., Una.
SWITCHMODE SERIES
NPN SILICON POWER DARLINGTON TRANSISTORS
WITH BASE-EMITTER SPEEDUP DIODE
The MJ10008 and MJ10009 darlington transistors are designed
for high-voltage, high-speed, power switching in inductive circuits
where fall time is critical. They are particularly suited for line oper
-ated switch-mode applications such as:
FEATURES:
'Continuous Collector Current - lc = 20 A
'Switching Regulators
•Inverters
'Solenoid and Relay Driven
•Motor Controls
MAXIMUM RATINGS
Characteristic
Symbol MJ10008 MJ10009
Collector-Emitter Voltage
VCEV
Collector-Emitter Voltage
VCEX{305)
Collector-Emitter Voltage
VCEO(SU3)
Emitter-Base Voltage
VEBO
Collector Current-Continuous
•c
-Peak
'CM
Base current
IB
Total Power Dissipation <STC=25°C
©Tc= 100°C
PD
Derate above 25°C
650
700
450
500
450
500
8.0
20
30
2.5
175
100
1.0
Operating and Storage Junction
Temperature Range
Tj '"^STQ
-65 to +200
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance Junction to Case R8JC
1.0
Unit
V
V
V
V
A
A
W
W
W/°C
°C
Unit
°c/w
200
S?175
|150
1 125
|100
§ 75
K
1 50
* 25
*«,
FIGURE -1 POWER DERATING
\
X^
\
X^
x^
\
\
25 50 75 100 125 150 175 200
Tc , TEMPCRATURE('C)
NPN
MJ10008
MJ10009
20 AMPERE
POWER DARLINGTON
TRANSISTORS
400-500 VOLTS
175 WATTS
TO-3
B
C
D
k^
^
H
H _A j
^x
V ^{^2}
^
^^> 1
•(*^{h 'K E}
*/ ^{i^^}
A
PIN l.BASE
2.EMITTER
COLLECTOR<CASE)
MILLIMETERS
HIM
MIN MAX
A 38.75 39.96
B 19.26 22.23
C
7.96 9.28
0 11.18 1Z19
E 25.20 26.67
F
0.92 1.06
G
1.38 1.62
H 29.90 30.40
1
16.64 17.30
J
3.88 436
K 10.67 11.18
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