KSD5090 Datasheet, PDF (2/2 Pages) New Jersey Semi-Conductor Products, Inc. – Silicon NPN Power Transistor

Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VcE(sat) ^{Collector-Emitter Saturation Voltage IC=6A;IB=1.2A}
VBE(sat) ^{Base-Emitter SaturationVoltage}
lc= 6A; IB= 1 ,2A
ICBO
Collector Cutoff Current
VCB= 800V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V ; lc= 0
hpE-i
DC Current Gain
lc=1A;VCE=5V
hpE-2
DC Current Gain
lc= 6A ; VCE= 5V
VECF ^{C-E Diode Forward Voltage}
tf
Fall Time
IF=8A
IC=6A,IB1=1.2A; IB2=-2.4A
RL= 33.3 n ; Vcc= 200V
KSD5090
MIN TYP. MAX UNIT
5.0
V
1.5
V
10
wA
40
200 mA
8
5
2.0
V
0.3 us