KSD5090 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – Silicon NPN Power Transistor

-d 'onauekoi Lpi
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Line.
TELEPHONE: [phone]
[phone]
FAX: [phone]
Silicon NPN Power Transistor
DESCRIPTION
• High Breakdown Voltage-
: VCBO= 1500V (Min)
• High Switching Speed
• High Reliability
• Built-in Damper Diode
APPLICATIONS
• Designed for color TV horizontal output applicaitions
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VOBO ^{Collector-Base Voltage}
1500
V
VCEO Collector-Emitter Voltage
800
V
VEBO Emitter-Base Voltage
6
V
Ic
Collector Current- Continuous
8
A
ICP
Collector Current-Peak
Collector Power Dissipation
PC
@ TC=25°C
Tj
Junction Temperature
Tstg
Storage Temperature Range
30
A
150
W
150
•c
-55-150 •c
KSD5090
I₁ ²
1 ^ri 1
1 1 Wr~i 1
1_{2 3}
3
PIN 1.BASE
1- COLLECTOR
3. EMITTER
TO-3PN package
C •*-
fijQif / ^*^\
I iL-J
K
G -*";^-L
,.,^r _--R
mm
DIM MIN MAX
A 19.90 20.10
B 15.50 15.70
C 4.70 4.90
D 0.90 1.10
E 1.90 2.10
F 3,40 3.60
G 2.90 3,10
H 3.20 3.40
J 0.595 0.605
K _20.50 20.70
L 1.90 2.10
N 10.89 10.91
q 4.90 5.10
R 3.35 3.45
s 1.995 2.005
u 5.90 6.'0
Y 9.90 10.10
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors