KSD5071 Datasheet, PDF (2/2 Pages) Fairchild Semiconductor – NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR

Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VcE(sat) ^{Collector-Emitter Saturation Voltage lc= 2.5A; IB= 0.8A}
VeE(sat) ^{Base-Emitter Saturation Voltage}
lc= 2.5A; IB= 0.8A
ICBO
Collector Cutoff Current
VCB= 800V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V ; lc= 0
FIFE
DC Current Gain
lc= 0.5A ; VCE= 5V
fr
Current-Gain—Bandwidth Product
lc=0.5A;VCE=10V
VECF
C-E Diode Forward Voltage
tf
Fall Time
IF= 3.5A
IC=3A,IB1=0.8A; IB2=-1.6A
RL= 66.7 Q;VCC= 200V
KSD5071
MIN TYP. MAX UNIT
8.0
V
1.5
V
10
uA
40
200 mA
8
3
MHz
2.0
V
0.4
us