KSD5071 Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One,
Silicon NPN Power Transistor
TELEPHONE: [phone]
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FAX: [phone]
KSD5071
DESCRIPTION
• High Breakdown Voltage-
: VCBO= 1500V (Min)
• High Switching Speed
• High Reliability
• Built-in Damper Diode
APPLICATIONS
• Designed for color TV horizontal output applicaitions
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
1500
V
VCEO Collector-Emitter Voltage
800
V
VEBO Emitter-Base Voltage
6
V
Ic
Collector Current- Continuous
3.5
A
ICP
Collector Current-Peak
Collector Power Dissipation
PC
@ TC=25'C
Tj
Junction Temperature
10
A
50
W
150
•c
Tstg
Storage Temperature Range
-55-150
r
12
PIN 1. BASE
2.COLLECTOR
3. EMITTER
TO-3PML package
/•
-~ c •*-
t
_^s» _F-
_ t , ...,
«_ia_tP_f
'•'IV
^_ji ' •
A•
k^li-'^-
t
mm
DIM MIN MAX
A 19,90 20,10
B 15.90 16,10
C 5,50 5.70
D 0,90 1.10
F 3.30 3.50
G 2.90 3.10
H 5.90 6,10
J Q. 595 0.605
K 22.30 22,50
L 1,90 2.10
N 10,80 _11.00
CJ 4.90 5,10
R 3.75 3.95
S 3,20 3.40
U 9.90 10.10
Y 4.70 4.90
Z 1.90 2.10
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice, Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in itsuse.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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