KSD5061 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VcE(sat) ^{Collector-Emitter Saturation Voltage lc= 2.5A; IB= 0.8A}
VeE(sat) ^{Base-Emitter Saturation Voltage}
lc= 2.5A; IB= 0.8A
ICBO
Collector Cutoff Current
VCB= 800V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V ; lc= 0
MFE
DC Current Gain
lc= 0.5A ; VCE= 5V
fi
Current-Gain—Bandwidth Product
IC=0.5A;VCE=10V
VECF C-E Diode Forward Voltage
tf
Fall Time
IF= 3.5A
lc=3A, lei=0.8A;lB2=-1.6A
RL= 66.7 a ; Vcc= 200V
KSD5061
MIN TYP. MAX UNIT
8.0
V
1.5
V
10
uA
40
200 mA
8
3
MHz
2.0
V
0.4 u s