KSD5061 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

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Cx
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: [phone]
[phone]
FAX: [phone]
Silicon NPN Power Transistor
KSD5061
DESCRIPTION
• High Breakdown Voltage-
: VCBO= 1500V (Min)
• High Switching Speed
• High Reliability
• Built-in Damper Diode
APPLICATIONS
• Designed for color TV horizontal output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO ^{Collector-Emitter Voltage}
800
V
VEBO
Emitter-Base Voltage
6
V
Ic
Collector Current- Continuous
3.5
A
ICP
Collector Current-Peak
Collector Power Dissipation
PC
@ TC=25°C
Tj
Junction Temperature
10
A
80
W
150
•c
Tstg
Storage Temperature Range
-55-150
'C
11!
1
12 3
2
1^i}
! VA * 1
3
PIN 1.BASE
2. COLLECTOR
3. EMITTER
TO-3PN package
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mm
DIM MIN MAX
A 19.90 20.10
B 15.50 15.70
C 4,70 4.90
D 0,90 1.10
E 1.90 _2.10
F 3.40 3.60
G 2.90 3.10
H 3.20 3.40
J 0.595 0.605
K 20.50 20.70
L 1.90 2.10
N 10.89 10.91
Cl 4.90 5.10
R 3.35 3.45
S 1.995 2.005
u 5,90 6.10
Y 9.90 10,10
-»*-D
*-N-»
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notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time ofgoing
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
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