KSD5059 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
Vceoisus) ^{Collector-Emitter Sustaining Voltage lc= 100mA; IB= 0}
VcE(sat)
Collector-Emitter Saturation Voltage
lc= 5A; IB= 1A
VaE(sat)
Base-Emitter Saturation Voltage
lc= 5A; IB= 1A
ICBO
Collector Cutoff Current
VCB= 800V ; IE= 0
ICES
Collector Cutoff Current
VCE=1500V;VBE=0
IEBO
Emitter Cutoff Current
VEB= 4V ; lc= 0
hpE-i
DC Current Gain
lc=1A;VCE=5V
hFE-2
DC Current Gain
lc= 5A ; VCE= 5V
tf
Fall Time
IC=4A,IB1=0.8A; IB2=-1.6A
KSD5059
MIN TYP. MAX UNIT
800
V
5.0
V
1.5
V
10
uA
1
mA
1 mA
8
3
0.3
PS