KSD5059 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
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[phone]
FAX: [phone]
Silicon NPN Power Transistor
KSD5059
DESCRIPTION
• High Breakdown Voltage-
: VCBO= 1500V (Min)
• High Switching Speed
• High Reliability
APPLICATIONS
• Designed for color monitor horizontal output applicaitions
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
1500
V
1
III
| |I
III
PIN 1. BASE
2. COLLECTOR
3- EMITTER
1 23
TO-3PML package
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v'
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Z
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VCEO ^{Collector-Emitter Voltage}
800
V
VEBO Emitter-Base Voltage
6
V
Ic
Collector Current- Continuous
6
A
ICP
Collector Current-Peak
Collector Power Dissipation
PC
@ TC=25'C
TJ
Junction Temperature
20
A
60
W
150
°C
Tstg
Storage Temperature Range
-55-150
°C
-R-
mm
DIM MIN MAX
A 19,90 20.10
B 15,90 16.10
C 5,50 5.70
D 0.90 1.10
F 3.30 3.50
G 2.90 3.10
R 5.90 6.10
J 0.535 0.605
K 22.30 '22.50
L 1.30 2.10
N 10.80 11,00
0 4,90 5.10
R 3.75 3.95
S 3.20 3,40
U 9.30 10.10
Y 4.70 4.90
Z 1.90 2.10
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in itsuse.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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