IRFZ40 Datasheet, PDF (2/3 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

IRFZ44/45
IRFZ40/42
N-CHANNEL
POWER MOSFETS
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
Symbol
Characteristic
Min Typ Max Units
Test Conditions
Drain-Source Breakdown Voltage
Vos=OV, b = 250MA
BVoss IRFZ44/45
60 - - V
IRFZ40/42
50
VGSIthI Gate Threshold Voltage
loss Gate-Source Leakage Forward
loss Gate-Source Leakage Reverse
loss Zero Gate Voltage Drain Current
2.0 - 4.0 V VOS=VGS, lo=250^A
— — 100 nA VQs=20V
— — -100 nA VGS=-20V
— 250 K* VDS=Max. Rating Vos=OV
1000 MA Vos=0 8Max. Rating, VGS=OV. TC=150°C
IDIOT) On-State Drain-Source Current (2) 35 — - A VDS^1 2V VQS=10V
Static Drain-Source IRFZ44/40
RoS(on| _{On-State Resistance IRFZ45/42}
QIS Forward Transconductance (2)
15
0.028 0
0.035
VGs=10V, ID=33A
u - -
Vos^SOV, ID-33A
C,ss Input Capacitance
- 2450 - _pF Vos=OV
COM Output Capacitance
— 740 — PF VDs=25V
Crss Reverse Transfer Capacitance
- 360 - PF f= 1.0MHz
tfl(on| Turn-On Delay Time
- — 32 ns
t, Rise Time
td(oll) Turn-Off Delay Time
- - 210 ns _{(MOSFET switching times are essentially}
— — 75 ns ^{independent of operating temperature)}
tl Fall Time
— - 130 ns
Qfl
Total Gate Charge
(Gate-Source Pulse Gate-Drain)
Qgs Gate-Source Charge
Q9<j Gate-Drain ("Miller") Charge
-
-
100
nC
VGs=10V, b = 52A, Vos = 0.8Max Rating
— — 21 nC ^{(Gate charge is essentially independent of}
operating temperature )
- - 58 nC
THERMAL RESISTANCE
RthJC
Rthcs
Junction-to-Case
Case-to-Smk
MAX
1.0
TYP
05
RIUJA Junction-to-Ambient
MAX
80
Notes: (1) Tj = 25°C to 175°C
(2) Pulse test Pulse width<300ns. Duty Cycle<2%
(3) Repetitive rating Pulse width limited by max junction temperature
K/w
K.'W Mounting surface flat
smooth, and greased
K/W Free Air Operation