IRFZ40 Datasheet, PDF (1/3 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

j.ziis.1) <^>£.mi-L.onaiLctot L/-* 10 ducts., [inc.
£/
J
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
IRFZ44/45
IRFZ40/42
FEATURES
Lower RDs (ON)
Improved inductive ruggedness
Fast switching times
Rugged polysilicon gate cell structure
Lower input capacitance
Extended safe operating area
Improved high temperature reliability
PRODUCT SUMMARY
Part Number
VDS
Ros(on)
ID
IRFZ44
60V 0.028(1
35A
IRFZ45
60V
0.035(1
35A
IRFZ40
50V
00280
35A
IRFZ42
50V ; 0035(1
35A
Current limited by wire 8 pin diameter
TELEPHONE: [phone]
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FAX: [phone]
N-CHANNEL
POWER MOSFETS
TO-220
IRFZ44/IRFZ45
IRFZ40/IRFZ42
MAXIMUM RATINGS
Characteristic
Symbol IRFZ44
IRFZ45
IRFZ40
IRFZ42
Drain-Source Voltage (1)
VDSS
60
50
Drain-Gate Voltage (Rcs=1 OM(1)(1)
VDGR
60
50
Gate-Source Voltage
VGS
± 20
Continuous Drain Current Tc= 25°C
ID
35
35
35
35
Continuous Drain Current Tc=100°C
ID
35
33
35
33
Drain Current— Pulsed (3)
IDM 210
190
210
190
Gate Current— Pulsed
IGM
±1 5
Single Pulsed Avalanche Energy (4)
EAS
53
Avalanche Current
IAS
35
Total Power Dissipation at Tc=25°C
Po
1£>0
Derate above 25°C
12
Operating and Storage
Junction Temperature Range
Tj. Tstg
-55 t 0 175°
Maximum Lead Temp, for Soldering
Purposes. 1/8" from case for 5 seconds
TL
3C 0
Notes: (1) Tj=25°C to 175°C
(2) Pulse test. Pulse width<300^s, Duty Cycle<2%
(3) Repetitive rating: Pulse with limited by max junction temperature
(4) L=50MH, Vdd=25V. RG=25(1, Starting Tj=25°C
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
Adc
mj
A
Watts
W/°C
°C
°C
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