IRF840 Datasheet, PDF (2/2 Pages) Motorola, Inc – N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR

N-Channel Mosfet Transistor
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(IW ^{Gate Threshold Voltage}
RDS(OH) ^{Drain-Source On-Resistance}
IGSS
Gate-Body Leakage Current
VDS= VGS; b= 0.25mA
VGS=10V; ID=4A
VGS= ±20V;VDS=0
loss
Zero Gate Voltage Drain Current
VDS= 500V; VGS=0
VSD
Forward On-Voltage
ls= 8A; VGS=0
IRF840
MIN
MAX UNIT
500
V
2
4
V
0.85
D
±500
nA
250
nA
2.0
V