IRF840 Datasheet, PDF (1/2 Pages) Motorola, Inc – N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Lf na.
N-Channel Mosfet Transistor
TELEPHONE: [phone]
[phone]
FAX: [phone]
IRF840
FEATURES
Drain Current -ID=8.0A@ TC=25°C
Drain Source Voltage-
: VDSs= 500V(Min)
Static Drain-Source On-Resistance
) = 0.85fi(Max)
DESCRITION
Designed for high voltage, high speed switching power applic-
ations such as switching regulators, converters, solenoid and
relay drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS Drain-Source Voltage
500
V
VGS Gate-Source Voltage-Continuous
+ 20
V
ID
Drain Current-Continuous
8
A
I DM
Drain Current-Single Plused
32
A
PD
Total Dissipation @Tc=25°C
125
W
Tj
Max. Operating Junction Temperature
150
r
Tstg
Storage Temperature
-55-150 r
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rfh j-c
Rth j-a
Thermal Resistance.Junction to Case
1.0
Thermal Resistance.Junction to Ambient 62.5
'CM/
"C/W
0(2)
i 1 '.
1. i 1.
1 2:
S(3)
LGate
PIN _2.Drain
3. Source
TO-220C package
- BM
j-ert ^{1-» V -*| |x~}
A
r
—«<x>-
i
*
K
r^{* MLPCS}
M'
rr^{•*!*• Q}
' :"-H ^{G •«}
soi-.
t
!
»!•*• j
R(-*-
c_!
l
1
4
mm
DIN MtN MAX
A 15.70 15.90
B 9.90 ^10.10
C 4.20 4.40
D 0.70 0.90
F 3.40 3.60
G 4.98 5.18
H 2.70 2.90
J 0.44 0.46
K 13.20 13.40
L 1.10 ^1.30
Q 2.70 2.90
R 2.50 ^2.70
S 1.29 1.31
U 6.45 6.65
V 8.66 8.86
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notice. Informationfurnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
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