IRF140 Datasheet, PDF (2/3 Pages) Samsung semiconductor – N-CHANNEL POWER MOSFETS

IRF140-143/IRF540-543
Maximum Ratings
Symbol
Characteristic
VDSS
Drain to Source Voltage1
VOQR
Drain to Gate Voltage1
RQS - 20 k«
VGS
Tj. TStg
Gate to Source Voltage
Operating Junction and
Storage Temperatures
TL
Maximum Lead Temperature
(or Soldering Purposes,
1/8" From Case for 5 $
Maximum Thermal Characteristics
RftjC
Thermal Resistance,
Junction to Case
PD
Total Power Dissipation
at Tc-^S-C
IDM
Pulsed Drain Current2
Rating
IRF140/142
IRFS40/542
100
100
±20
-55 to +15C
275
IRF140-143
1.0
125
108
Electrical Characteristics (Tc = 25°C unless otherwise noted)
Symbol
Characteristic
Off Characteristics
V(BR)DSS ^{Drain Source Breakdown Voltage1}
IRF140/142/540/542
IRF141/143/541/543
loss
Zero Gate Voltage Drain Current
Mln
100
60
Max
250
1000
IGSS
Gate-Body Leakage Current
IRF140-143
IRF540-S43
On Characteristics
vGS(lh) ^{Gate Threshold Voltage}
2.0
R[3S(on) ^{Static Drain-Source On-Resistance2}
IRF140/141/540/541
IRF142/143/542/543
gis
Forward Transconductance
r 6.0
±100
±500
4.0
0.085
0.11
Rating
IRF141/143
IRF641/S43
Unit
60
V
60
V
±20
V
-55 to +150
°c
275
•c
IRF540-543
1.0
125
108
°C/W
W
A
Unit
Test Conditions
V
VQS-O V, ID= 250 M
J"A
VDS- Rated VDSS, VQS-=0 V
HA
VDS - 0.8 x Rated VDSS.
VQS = O V, Tc-ISS'C
nA
VQS- ±20 V, Voa-0 V
V
ID => 250 AIA, VDS " VQS
ft
VGS-10 V, ID = 15 A
S Rj) VDS -10 V, b-15 A