IRF140 Datasheet, PDF (1/3 Pages) Samsung semiconductor – N-CHANNEL POWER MOSFETS

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Description
These devices are n-channel, enhancement mode, power
MOSFETs designed especially for high power, high speed
applications, such as switching power supplies, UPS, AC
and DC motor controls, relay and solenoid drivers and
high energy pulse circuits.
Low Boston)
VGS Rated at ±20 V
Silicon Gate for Fast Switching Speeds
IDSS. Vos(on), Specified at Elevated Temperature
Rugged
Low Drive Requirements
Ease of Paralleling
Product Summary
Part Number
IRF140
IRF141
IRF142
IRF143
IRF540
IRF541
IRF542
IRF543
VDSS
100 V
60 V
100 V
60 V
100 V
60 V
100 V
60 V
RDS (on)
0.085 J2
0.085 n
0.11 n
0.11 n
0.085 n
o.o85 n
0.11 n
0.11 n
IRF140-143/IRF540-543
N-Channel Power MOSFETs,
27 A, 60-100 V
Power And Discrete Division
TO-204AE
TO-220AB
IRFS40
IRF541
IRF542
IRF543
ID at
Tcsas'c
27 A
27 A
24 A
24 A
27 A
27 A
24 A
24 A
ID at
Tc = 100'C
17 A
17 A
15 A
15 A
17 A
17 A
15 A
15 A
Case Style
TO-204AE
TO-220AB
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