GES5305 Datasheet, PDF (2/2 Pages) New Jersey Semi-Conductor Products, Inc. – Silicon Darlington Transistors

Signal Transistors
2N5305,6, 6A, GES5305, 6, 6A
ELECTRICAL CHARACTERISTICS,At Ambient Temperature <TA) = 26°C Unless Otherwise Specified
CHARACTERISTICS
Colleclor-To-Emltier Breakdown Voltage
(lc= 10mA, IB- 0)
Collector-To-Base Breakdown Voltage
<|C = 0.1HA.IE = 0)
Emitter-To-Base Breakdown Voltage
de - 0>A, lc - 0)
DC Forward Current Transfer Ratio
(|n > 2mA, VCE . 5V) 2NS305, QES6305
(lc - 100mA, VCE . 5V) 2NS305, GES5305
(lc - 2 mA, VCE . 5V) 2NB308, GES5306A
(I,: - 100mA. VCE - 5V) 2N5306. GES5306A
Collector-To-Emltter Saturation Voltage
(lc - 200mA, IB - 0.2mA)
Base-To-Emitter Saturation Voltage
(lc - 200mA. IB - 0.2mA)
Bste-To-Emitler Voltage
(lc - 200mA, VCE • 6V)
Colleclor-To-Base Cutoff Current
<VCB-25V,le = 0)
(VOB = ?5V,IE = 0,TA.100«)C)
Small-Signal Current Transfer Ratio
(VcE ' 5V> >C « ZmA. ' • ' KHZ) 2N5306, GES5305
(VCE - 5V, lc = 2mA. f = 1 KHZ) 2N6306, 6A, GES5306, 6A
(VCE " 5V'!C - 2mA-( " 10 MHZ)
Input Capacitance
(VFB - 0.6V, f - 1 MHZ)
Output Capacitance
(VCB = 10V, 1 = 1 MHZ)
Input Impedance
(VCE - SV. lc . 2mA, f = 1KHz)
Gain-Bandwidth Product
(VCE • 5V> 'c • 2mA. 1 " 10MHz)
Nolce Figure
(VCE - 5V> 'c = 0-«m A, Rg = 160 kO,
1= 10 Hz, to 10 kHz, Bandwidth - 15 7kHz)2NW06A.GES5306A
SYMBOL
BVCEO
BVcao
BVEBO
riFE
VCE(««i)
VBE(sai)
VBE
ICBO
If.
IMI.I
C.b
Ccb
IT
en
LIMITS
MIN.
MAX.
25
_
25
—
12
_
2,000
6,000
7,000
20,000
_
_
_
_
-
20,000
-
70,000
-
1.*
1.6
1.6
100
20
2.000
7.000
-
15.6
-
10.S Typical
7.6
Typical
10
650 Typical
60
_
195
Typical
230
UNITS
V
-
V
nA
fA
dB
Pf
KO
MHZ
nVVHz
TERMINAL CONNECTIONS
TO-92 Package
Lead 1 - Emitter
Lead 2•Bate
Lead 3 • Collector
TERMINAL CONNECTIONS
TO-98 Package
Lead 1 - Emitter
Lead 2 - Collector
Lead 3 - Bate