GES5305 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – Silicon Darlington Transistors

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
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Signal Transistor*
2N5305,6, 6A, GES5305,6, 6A
Silicon Darlington Transistors
TO-92
TO-98
MAXIMUM RATINGS, Absoluts-Maximum Values:
COLLECTORTO EMITTER VOLTAGE (VCEO)
EMITTER TO BASE VOLTAGE (VEBO)
COLLECTOR TO BASE VOLTAGE (VOBO)
CONTINUOUS COLLECTOR CURRENT (Ic)
COLLECTOR CURRENT (PULSED)" (lc)
CONTINUOUS BASE CURRENT (IB)
TOTAL POWER DISSIPATION (TA s S5°C)(PT)
DERATE FACTOR (TA 5- 2S°C)
OPERATING TEMPERATURE(Tj)
STORAGE TEMPERATURE (TSTG)
LEAD TEMPERATURE, 1/16" ± «32" (1.58mm 10.8mm) from case lor 10S max (TJ
•Pulsed Conditions: Pulse width 3 300 )is. Duty factor £ 2%.
25V
12V
25V
300mA
500 mA
50mA
400mW
4 mW/'C
-65° to + 125«C
-65° to + 150°C
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encouragescustomersto verify that datasheetsare current before placing orders.
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