DT430 Datasheet, PDF (2/2 Pages) New Jersey Semi-Conductor Products, Inc. – Silicon NPN Darlington Power Transistor

Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage ^lc=10mA;lB=0
V(BR)CBO ^{Collector-Base Breakdown Voltage}
lc=1mA;lE=0
V(BR)EBO ^{Emitter-Base Breakdown Voltage}
lE=50mA;lc=0
VcE(sat)-1 ^{Collector-Emitter Saturation Voltage lc=1A; lB=10mA}
VcE(sat)-2 ^{Collector-Emitter Saturation Voltage lc=6A; lB=50mA}
ICBO ^{Collector Cutoff Current}
VCB= 400V; IE= 0
IEBO
Emitter Cutoff Current
VEB= TV; lc= 0
hpE-1 DC Current Gain
|c= 4A; VCE= 4V
hpE-2
DC Current Gain
lc= 5mA; VCE= 4V
DT430
MIN TYP. MAX UNIT
300
V
400
V
7
V
1.5
V
3.0
V
100 uA
100
J^A
2000
300